Flexible complementary circuits operating at sub-0.5 V via hybrid organic–inorganic electrolyte-gated transistors

Abstract

Electrolyte-gated transistor (EGT)–based inverter circuits are the basic building blocks of next-generation flexible electronic devices. However, constructing high-performance complementary inverters is challenging due to the unbalanced electrical performances of available p- and n-type EGT semiconducting materials. Here we report high-performance EGT complementary inverters achieved by combining p-type organic electrochemical transistors based on an ion-permeable semiconducting organic polymer and n-type electric double-layer transistors based on an ion-impermeable metal oxide semiconductor. The resulting closely balanced complementary inverters achieve ultrahigh voltage gain (>110) under a low supply voltage of only 0.7 V and have been successfully used to achieve flexible logic circuits and sensitive electrophysiological signal amplification suitable for ophthalmologic diagnostics and measuring eye movement.

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 29, 2021
Source ID
10.1073/pnas.2111790118

Entities

People

  • Antonio Facchetti
  • Gang Wang
  • Hongming Chen
  • Jianfeng Ping
  • Jianhua Chen
  • Tobin J. Marks
  • Wei Huang
  • Xinming Zhuang
  • Yao Yao
  • Yibin Ying

Organizations

  • Air Force Office of Scientific Research
  • China Scholarship Council
  • National Science Foundation
  • Northwestern University
  • University of Electronic Science and Technology of China
  • Zhejiang University

Tags

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics