High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
Abstract
Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In 2 O 3 /In 2 O 3 :polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO 2 . Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO x gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 11, 2023
- Source ID
- 10.1073/pnas.2216672120
Entities
People
- Antonio Facchetti
- Fengjing Liu
- Gang Wang
- Jianhua Chen
- Joon-Seok Kim
- Junsheng Yu
- Lincoln J Lauhon
- Tobin J. Marks
- Wei Huang
- Xinming Zhuang
- Yao Chen
- Yao Yao
- Yuhua Cheng
- Zai-Xing Yang
- Zhi Wang
Organizations
- Air Force Research Laboratory Information Directorate
- China Postdoctoral Science Foundation
- National Natural Science Foundation of China
- National Science Foundation
- Natural Science Foundation of Shandong Province
- Northwestern University
- Shandong University
- University of Electronic Science and Technology of China