ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 20, 2015
- Source ID
- 10.1088/0268-1242/30/12/125017
Entities
People
- Bongmook Lee
- Narayanan Ramanan
- Veena Misra
Organizations
- National Science Foundation
- Office of Naval Research