N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 16, 2015
- Source ID
- 10.1088/0268-1242/30/5/055012
Entities
People
- Elaheh Ahmadi
- Feng Wu
- Haoran Li
- James S. Speck
- Karine Hestroffer
- Maher Tahhan
- S. Keller
- Stephen W. Kaun
- Umesh Mishra
Organizations
- Office of Naval Research