Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 09, 2017
- Source ID
- 10.1088/1361-6463/aa5208
Entities
People
- A Paranjpe
- B Krishnan
- C. Bayram
- D K Sadana
- H-P Lee
- J Perozek
- K. B. Reuter
Organizations
- Air Force Office of Scientific Research
- Defense Advanced Research Projects Agency
- Office of Naval Research