Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
Abstract
The ultra-wide bandgap semiconductor gallium oxide (Ga2O3) offers substantial promise to significantly advance power electronic devices as a result of its high breakdown electric field and maturing substrate technology. A key remaining challenge is the ability to grow electronic-grade epitaxial layers at rates consistent with 20–40 μm thick drift regions needed for 20 kV and above technologies. This work reports on extensive characterization of epitaxial layers grown in a novel metalorganic chemical vapor deposition tool that permits growth rates of 1.0–4.0 μm h−1. Specifically, optical, structural and electrical properties of epilayers grown at ∼1 μm h−1 are reported, including employment in an operating MOSFET. The films demonstrate relatively smooth surfaces with a high degree of structural order, limited point defectivity (Nd − Na ≈ 5 × 1015 cm−3) and an optical bandgap of 4.50 eV. Further, when employed in a MOSFET test structure with an n+ doped channel, a record high mobility for a transistor structure with a doped channel of 170 cm2 V−1 s−1 was measured via the Hall technique at room temperature. This work reports for the first time a β-Ga2O3 MOSFET grown using Agnitron Technology’s high growth rate MOCVD homoepitaxial process. These results clearly establish a significant improvement in epilayer quality at growth rates that can support future high voltage power device technologies.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 28, 2020
- Source ID
- 10.1088/1361-6463/abbc96
Entities
People
- A. Osinsky
- Alan G Jacobs
- Alyssa L. Mock
- Charles R. Eddy
- Daniel J Pennachio
- Evan R. Glaser
- Fikadu Alema
- J. Woodward
- Jaime A. Freitas Jr.
- James C. Gallagher
- Jenifer R. Hajzus
- Jennifer K Hite
- Karl D. Hobart
- Marko J. Tadjer
- Michael A. Mastro
- Mona Ebrish
- Neeraj Nepal
- Rachael L. Myers-ward
- Travis J. Anderson
Organizations
- Air Force Office of Scientific Research
- Office of Naval Research