Carrier density oscillation in the photoexcited semiconductor
Abstract
The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of non-linear dynamics and formation of spatiotemporal patterns due to the spontaneous generation of competing processes. Here, we use scanning ultrafast electron microscopy to show that the transport of hot carriers in the strongly excited semiconductor slows down by turning into an oscillatory process; this is evidenced by the expansions and contractions in the second moment of the distribution. We attribute such a response to the electric field generated by the spatial separation of photo-excited electrons and holes under intrinsic and photo-induced fields; we then introduce a transport model that mimics the experimental observation. Our finding provides a direct imaging evidence for the electrostatic oscillation of hot carriers in the highly excited semiconductor and offers new insights into their dynamics in space and time.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 19, 2021
- Source ID
- 10.1088/1361-6463/abd1a4
Entities
People
- Amir Jafari
- Bolin Liao
- Ebrahim Najafi
Organizations
- Air Force Office of Scientific Research
- National Science Foundation