The Fourier signatures of memristive hysteresis
Abstract
While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems without hysteresis by the values of certain Fourier series coefficients. We also show that the Fourier series convergence depends on driving conditions, and introduce a measure of hysteresis. These results may be used to quantify the memory content of resistive memories, and tune their Fourier spectrum according to the excitation signal.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 30, 2021
- Source ID
- 10.1088/1361-6463/abedf1
Entities
People
- Chih-Chun Chien
- Massimiliano Di Ventra
- Yuriy V. Pershin
Organizations
- Defense Advanced Research Projects Agency