S/Mo ratio and petal size controlled MoS2 nanoflowers with low temperature metal organic chemical vapor deposition and their application in solar cells

Abstract

Vertically aligned two-dimensional (2D) molybdenum disulfide nanoflowers (MoS2 NFs) have drawn considerable attention as a novel functional material with potential for next-generation applications owing to their inherently distinctive structure and extraordinary properties. We report a simple metal organic chemical vapor deposition (MOCVD) method that can grow high crystal quality, large-scale and highly homogeneous MoS2 NFs through precisely controlling the partial pressure ratio of H2S reaction gas, P SR, to Mo(CO)6 precursor, P MoP, at a substrate temperature of 250 °C. We investigate microscopically and spectroscopically that the S/Mo ratio, optical properties and orientation of the grown MoS2 NFs can be controlled by adjusting the partial pressure ratio, P SR/P MoP. It is also shown that the low temperature MOCVD (LT-MOCVD) growth method can regulate the petal size of MoS2 NFs through the growth time, thereby controlling photoluminescence intensity. More importantly, the MoS2 NFs/GaAs heterojunction flexible solar cell exhibiting a power conversion efficiency of ∼1.3% under air mass 1.5 G illumination demonstrates the utility of the LT-MOCVD method that enables the direct growth of MoS2 NFs on the flexible devices. Our work can pave the way for practical, easy-to-fabricate 2D materials integrated flexible devices in optical and photonic applications.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 19, 2021
Source ID
10.1088/1361-6528/abe32c

Entities

People

  • Hyeji Park
  • Jaeseo Park
  • Jihun Mun
  • Junoh Kim
  • Nguyen Thi Thuy
  • Sang Jun Lee
  • Sang-Woo Kang
  • Suho Park
  • Zahyun Ku

Organizations

  • Air Force Research Laboratory
  • Korea Research Institute of Standards and Science

Tags

Fields of Study

  • Materials science

Readers

  • Nanocomposite Materials Science
  • Thin Film Deposition Science.