Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Abstract
In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ valley offering more bandgap directness; (ii) increased carrier density in the well; and (iii) improved carrier collection due to increased barrier height. As a result, significantly enhanced emission from the quantum well was observed. The strong photoluminescence (PL) signal allows for the estimation of quantum efficiency (QE), which was unattainable in previous studies. Using pumping-power-dependent PL spectra at 20K, the peak spontaneous QE and external QE were measured as 37.9% and 1.45%, respectively.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 30, 2021
- Source ID
- 10.1088/1361-6528/ac38e4
Entities
People
- Andrian V Kuchuk
- Baohua Li
- Grey Abernathy
- Joe Margetis
- John Tolle
- Oluwatobi Olorunsola
- Perry C. Grant
- Shui-Qing Yu
- Solomon Ojo
- Sylvester Amoah
- Wei Dou
- Wei Du
- Yiyin Zhou
- Yong-hang Zhang
Organizations
- Air Force Office of Scientific Research
- Wilkes University