GaAs/GaAsPBi core–shell nanowires grown by molecular beam epitaxy
Abstract
We report on the growth, structural, and optical properties of GaAs/GaAsPBi core–shell nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents advantageous optical properties, in particular, for near- and mid-infrared optical applications. Scanning electron microscopy shows that although the stems of GaAs/GaAsP and GaAs/GaAsBi core–shell NWs preserve the hexagonal prism shape, the GaAs/GaAsPBi core–shell NWs develop a quasi-three-fold orientational symmetry affected by the hexagonal prismatic core. Detailed structural analyses of a GaAs/GaAsPBi core–shell stem show that it crystallized with zincblende structure with a nominal shell composition of GaAs0.617P0.362Bi0.021. Photoluminescence of GaAs/GaAsPBi core–shell NWs shows the luminescent peak at 1.02 eV with high internal quantum efficiency at room temperature (IQERT ∼ 6%) superior to those of MBE-grown GaAs core NWs and GaAsPBi multiple quantum wells earlier reported. Energy-dispersive x-ray spectroscopy performed on the GaAs/GaAsPBi core–shell NWs yields an estimated bandgap different from the optically measured value. We attribute this discrepancy to the NW compositional fluctuations that also may explain the high IQERT.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 06, 2021
- Source ID
- 10.1088/1361-6528/ac39ca
Entities
People
- C. Thanachayanont
- Chalermchai Himwas
- Maria Tchernycheva
- Somsak Panyakeow
- Songphol Kanjanachuchai
- V. Yordsri
Organizations
- Office of Naval Research Global
- Thailand National Science and Technology Development Agency
- Thailand Research Fund