Bottom-up nanoscale patterning and selective deposition on silicon nanowires
Abstract
We demonstrate a bottom-up process for programming the deposition of coaxial thin films aligned to the underlying dopant profile of semiconductor nanowires. Our process synergistically combines three distinct methods—vapor–liquid–solid nanowire growth, selective coaxial lithography via etching of surfaces (SCALES), and area-selective atomic layer deposition (AS-ALD)—into a cohesive whole. Here, we study ZrO2 on Si nanowires as a model system. Si nanowires are first grown with an axially modulated n-Si/i-Si dopant profile. SCALES then yields coaxial poly(methyl methacrylate) (PMMA) masks on the n-Si regions. Subsequent AS-ALD of ZrO2 occurs on the exposed i-Si regions and not on those masked by PMMA. We show the spatial relationship between nanowire dopant profile, PMMA masks, and ZrO2 films, confirming the programmability of the process. The nanoscale resolution of our process coupled with the plethora of available AS-ALD chemistries promises a range of future opportunities to generate structurally complex nanoscale materials and electronic devices using entirely bottom-up methods.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 13, 2021
- Source ID
- 10.1088/1361-6528/ac3bed
Entities
People
- Amar Mohabir
- Amy Brummer
- Daniel Aziz
- Eric M Vogel
- Kathleen Leal Taylor
- Michael A Filler
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation