Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization

Abstract

Recent advances in the growth of III-V semiconductor nanowires (NWs) hold great promise for nanoscale optoelectronic device applications. It is established that a small amount of nitrogen (N) incorporation in III-V semiconductor NWs can effectively red-shift their wavelength of operation and tailor their electronic properties for specific applications. However, understanding the impact of N incorporation on non-equilibrium charge carrier dynamics and transport in semiconducting NWs is critical in achieving efficient semiconducting NW devices. In this work, ultrafast optical pump-terahertz probe spectroscopy has been used to study non-equilibrium carrier dynamics and transport in Te-doped GaAsSb and dilute nitride GaAsSbN NWs, with the goal of correlating these results with electrical characterization of their equilibrium photo-response under bias and low-frequency noise characteristics. Nitrogen incorporation in GaAsSb NWs led to a significant increase in the carrier scattering rate, resulting in a severe reduction in carrier mobility. Carrier recombination lifetimes of 33 ± 1 picoseconds (ps) and 147 ± 3 ps in GaAsSbN and GaAsSb NWs, respectively, were measured. The reduction in the carrier lifetime and photoinduced optical conductivities are due to the presence of N-induced defects, leading to deterioration in the electrical and optical characteristics of dilute nitride NWs relative to the non-nitride NWs. Finally, we observed a very fast rise time of ∼2 ps for both NW materials, directly impacting their potential use as high-speed photodetectors.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jul 26, 2022
Source ID
10.1088/1361-6528/ac7d61

Entities

People

  • Dzmitry Yarotski
  • Hirandeep Kuchoor
  • Kendall Dawkins
  • Long Yuan
  • Min-cheol Lee
  • Rabin Pokharel
  • Rohit P Prasankumar
  • Shanthi Iyer
  • Shisir Devkota
  • Yue Huang

Organizations

  • Air Force Office of Scientific Research
  • Center for Integrated Nanotechnologies
  • Los Alamos National Laboratory
  • National Nuclear Security Administration
  • National Science Foundation
  • Office of Science
  • United States Department of Energy

Tags

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics