Impact of InGaAs carrier collection quantum well on the performance of InAs QD active region lasers fabricated by diblock copolymer lithography and selective area epitaxy

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 14, 2019
Source ID
10.1088/1361-6641/aaf8e8

Entities

People

  • Honghyuk Kim
  • L. J. Mawst
  • Padma Gopalan
  • Thomas F Kuech
  • Wei Wei

Organizations

  • Army Research Office
  • National Science Foundation

Tags

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Microelectromechanical Systems
  • Quantum Computing