Enhanced optical and electrical performance of Ge1−x Sn x /Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 20, 2019
- Source ID
- 10.1088/1361-6641/ab0916
Entities
People
- Buguo Wang
- John Kouvetakis
- Michael R. Hogsed
- Patrick M. Wallace
- Thomas R. Harris
Organizations
- Air Force Office of Scientific Research