Lateral β-Ga2O3 field effect transistors
Abstract
Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap semiconductor with disruptive potential for ultra-low power loss, high-efficiency power applications. The critical field strength is the key enabling material parameter of BGO which allows sub-micrometer lateral transistor geometry. This property combined with ion-implantation technology and large area native substrates result in exceptionally low conduction power losses, faster power switching frequency and even radio frequency power. We present a review of BGO epitaxial materials and lateral field-effect transistors developments, highlight early achievements and discuss engineering solutions with power switching and radio frequency applications in mind.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 28, 2019
- Source ID
- 10.1088/1361-6641/ab55fe
Entities
People
- Adam T. Neal
- Andrew J. Green
- Antonio Crespo
- Dennis E. Walker Jr.
- Donald L. Dorsey
- Eric R. Heller
- Gregg H. Jessen
- Kelson D. Chabak
- Kevin D. Leedy
- Kyle J. Liddy
- Miles T. Lindquist
- Neil A. Moser
- Nicholas C. Miller
- Nolan S. Hendricks
- Robert C. Fitch Jr.
- Shin Mou
- Thaddeus J. Asel
Organizations
- Air Force Office of Scientific Research