First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 09, 2020
Source ID
10.1088/1361-6641/ab860a

Entities

People

  • Brian Romanczyk
  • Chirag Gupta
  • Matthew Guidry
  • Nirupam Hatui
  • S. Keller
  • Shubhra S Pasayat
  • Umesh Mishra
  • Weiyi Li
  • Xun Zheng

Organizations

  • Office of Naval Research
  • Semiconductor Research Corporation