Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Abstract
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a point at which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, we propose the shift to the aluminum nitride (AlN) platform. AlN allows for smarter, highly-scaled heterostructure design that will improve the output power and thermal management of III-nitride amplifiers. Beyond improvements over the incumbent amplifier technology, AlN will allow for a level of integration previously unachievable with GaN electronics. State-of-the-art high-current p-channel FETs, mature filter technology, and advanced waveguides, all monolithically integrated with an AlN/GaN/AlN HEMT, is made possible with AlN. It is on this new AlN platform that nitride electronics may maximize their full high-power, high-speed potential for mm-wave communication and high-power logic applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 22, 2021
- Source ID
- 10.1088/1361-6641/abe5fd
Entities
People
- Austin Hickman
- Debdeep Jena
- Huili Grace Xing
- James C. M. Hwang
- Kazuki Nomoto
- Lei Li
- Reet Chaudhuri
- Samuel J Bader
Organizations
- Air Force Office of Scientific Research
- Division of Materials Research
- Intel Corporation
- Semiconductor Research Corporation