Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) by post-metallization annealing

Document Details

Document Type
Pub Defense Publication
Publication Date
Jul 28, 2021
Source ID
10.1088/1361-6641/ac1566

Entities

People

  • Elaheh Ahmadi
  • Islam Sayed
  • Subhajit Mohanty
  • Wenjian Liu
  • Zhe Jian

Organizations

  • Air Force Office of Scientific Research
  • National Science Foundation
  • Office of Naval Research