On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
Abstract
In this work, an alternative scheme to estimate the resistivity and ionization energy of Al-rich p-AlGaN epitaxial films is developed using two large-area ohmic contacts. Accordingly, the resistivities measured using current–voltage measurements were observed to corroborate the Hall measurements in the Van der Pauw configuration. A free hole concentration of ∼1.5 × 1017 cm−3 and low ionization energy of ∼65 meV in Mg-doped Al0.7Ga0.3N films is demonstrated. Nearly an order of magnitude lower hydrogen concentration than Mg in the as-grown AlGaN films is thought to reduce the Mg passivation and enable higher hole concentrations in Al-rich p-AlGaN films, compared to p-GaN films. The alternate methodology proposed in this work is expected to provide a simpler pathway to evaluate the electrical characteristics of Al-rich p-AlGaN films for future III-nitride ultraviolet light emitters.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 26, 2021
- Source ID
- 10.1088/1361-6641/ac3710
Entities
People
- Aakash Jadhav
- Andrew Klump
- Biplab Sarkar
- Dolar Khachariya
- Pegah Bagheri
- Pramod Reddy
- Ramón Collazo
- Ronny Kirste
- Seiji Mita
- Shashwat Rathkanthiwar
- Zlatko Sitar
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation