All-Si valley-Hall photonic topological insulator

Abstract

An all-Si photonic structure emulating the quantum-valley-Hall effect is proposed. We show that it acts as a photonic topological insulator (PTI), and that an interface between two such PTIs can support edge states that are free from scattering. The conservation of the valley degree of freedom enables efficient in- and out-coupling of light between the free space and the photonic structure. The topological protection of the edge waves can be utilized for designing arrays of resonant time-delay photonic cavities that do not suffer from reflections and cross-talk.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 01, 2016
Source ID
10.1088/1367-2630/18/2/025012

Entities

People

  • Gennady Shvets
  • Tzuhsuan Ma

Organizations

  • Air Force Office of Scientific Research
  • National Science Foundation

Tags

Fields of Study

  • Physics

Readers

  • Control Systems Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Space