Tunable capacitor for superconducting qubits using an InAs/InGaAs heterostructure
Abstract
Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heterostructure. Rigorous numerical simulations of the semiconductor and high frequency electromagnetic behavior of the coupler and microwave circuitry yield an on/off ratio of more than one order of magnitude. We give an estimate of the dielectric-limited loss from the inclusion of the coupler in a two qubit system, with coupler coherences ranging from a few to tens of microseconds.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 04, 2023
- Source ID
- 10.1088/2058-9565/aceb18
Entities
People
- Eliot Kapit
- Javad Shabani
- Matthieu C. Dartiailh
- Nicholas Materise
- William M. Strickland
Organizations
- Army Research Office
- National Science Foundation