1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization
Abstract
This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 21, 2020
- Source ID
- 10.1088/2515-7647/aba5a6
Entities
People
- Bozhang Dong
- Frédéric Grillot
- Heming Huang
- Jianan Duan
- John E. Bowers
- Justin C. Norman
- Mario Dumont
- Songtao Liu
- Xavier C De Labriolle
Organizations
- ARPA-E