Single-photon generation from self-assembled GaAs/InAlAs(111)A quantum dots with ultrasmall fine-structure splitting

Abstract

We present a novel semiconductor single-photon source based on tensile-strained (111)-oriented GaAs/InAlAs quantum dots (QDs) exhibiting ultrasmall exciton fine-structure splitting (FSS) of ≤ 8 µeV. Using low-temperature micro-photoluminescence spectroscopy, we identify the biexciton-exciton radiative cascade from individual QDs, which, combined with small FSS, indicates these self-assembled GaAs(111) QDs are excellent candidates for polarization-entangled photon-pair generation.

Document Details

Document Type
Pub Defense Publication
Publication Date
Apr 01, 2021
Source ID
10.1088/2515-7647/abf24e

Entities

People

  • Christopher Schuck
  • Galan Moody
  • Kevin Silverman
  • Paul J. Simmonds
  • Robert Boutelle

Organizations

  • Air Force Office of Scientific Research
  • Division of Materials Research

Tags

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing