Designing polar textures with ultrafast neuromorphic features from atomistic simulations

Abstract

This review summarizes recent works, all using a specific atomistic approach, that predict and explain the occurrence of key features for neuromorphic computing in three archetypical dipolar materials, when they are subject to THz excitations. The main ideas behind such atomistic approach are provided, and illustration of model relaxor ferroelectrics, antiferroelectrics, and normal ferroelectrics are given, highlighting the important potential of polar materials as candidates for neuromorphic computing. Some peculiar emphases are made in this Review, such as the connection between neuromorphic features and percolation theory, local minima in energy path, topological transitions and/or anharmonic oscillator model, depending on the material under investigation. By considering three different and main polar material families, this work provides a complete and innovative toolbox for designing polar-based neuromorphic systems.

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 01, 2023
Source ID
10.1088/2634-4386/acbfd6

Entities

People

  • Brahim Dkhil
  • Changsong Xu
  • Diyar Talbayev
  • Julie Grollier
  • L. Bellaiche
  • Sergei Prokhorenko
  • Sergey Prosandeev
  • Yali Yang
  • Yousra Nahas

Organizations

  • Arkansas Research Alliance
  • European Commission
  • National Science Foundation
  • Office of Basic Energy Sciences
  • Office of Naval Research
  • United States Department of Defense
  • United States Department of Energy

Tags

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design