Integration of Ag-CBRAM crossbars and Mott ReLU neurons for efficient implementation of deep neural networks in hardware

Abstract

In-memory computing with emerging non-volatile memory devices (eNVMs) has shown promising results in accelerating matrix-vector multiplications. However, activation function calculations are still being implemented with general processors or large and complex neuron peripheral circuits. Here, we present the integration of Ag-based conductive bridge random access memory (Ag-CBRAM) crossbar arrays with Mott rectified linear unit (ReLU) activation neurons for scalable, energy and area-efficient hardware (HW) implementation of deep neural networks. We develop Ag-CBRAM devices that can achieve a high ON/OFF ratio and multi-level programmability. Compact and energy-efficient Mott ReLU neuron devices implementing ReLU activation function are directly connected to the columns of Ag-CBRAM crossbars to compute the output from the weighted sum current. We implement convolution filters and activations for VGG-16 using our integrated HW and demonstrate the successful generation of feature maps for CIFAR-10 images in HW. Our approach paves a new way toward building a highly compact and energy-efficient eNVMs-based in-memory computing system.

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 29, 2023
Source ID
10.1088/2634-4386/aceea9

Entities

People

  • Duygu Kuzum
  • Ivan K. Schuller
  • Jaeseoung Park
  • Javier del Valle
  • Pavel Salev
  • Sangheon Oh
  • Yuhan Shi

Organizations

  • National Institutes of Health
  • National Science Foundation
  • Office of Naval Research Global
  • United States Department of Energy

Tags

Fields of Study

  • Computer science

Readers

  • Distributed Systems and Data Platform Development
  • Integrated Circuit Design and Technology.
  • Nanofabrication and Microfabrication.

Technology Areas

  • AI & ML
  • AI & ML - Machine Learning Algorithms
  • AI & ML - Neural Networks