Spatial resolution in secondary-electron microscopy

Abstract

We first review the significance of resolution and contrast in electron microscopy and the effect of the electron optics on these two quantities. We then outline the physics of the generation of secondary electrons (SEs) and their transport and emission from the surface of a specimen. Contrast and resolution are discussed for different kinds of SE imaging in scanning electron microscope (SEM) and scanning-transmission microscope instruments, with some emphasis on the observation of individual atoms and atomic columns in a thin specimen. The possibility of achieving atomic resolution from a bulk specimen at SEM energies is also considered.

Document Details

Document Type
Pub Defense Publication
Publication Date
May 09, 2022
Source ID
10.1093/jmicro/dfac022

Entities

People

  • R F Egerton
  • Yupeng Zhu

Organizations

  • Brookhaven National Laboratory
  • Natural Sciences and Engineering Research Council
  • Office of Science
  • University of Alberta

Tags

Fields of Study

  • Physics

Readers

  • Plasma Physics.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene