Interfacial Charge Dynamics in Metal-Oxide–Semiconductor Structures: The Effect of Deep Traps and Acceptor Levels in GaN
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 07, 2020
- Source ID
- 10.1103/physrevapplied.13.014007
Entities
People
- Alexandros Kyrtsos
- Andrea Palmieri
- E. Bellotti
- Masahiko Matsubara
- Y. Sharabani
Organizations
- United States Army Research Laboratory