Two-stage proximity-induced gap opening in topological-insulator–insulating-ferromagnet (BixSb1−x)2Te3 – EuS bilayers

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 09, 2018
Source ID
10.1103/physrevb.98.081403

Entities

People

  • Aharon Kapitulnik
  • Qi I. Yang

Organizations

  • Defense Advanced Research Projects Agency
  • National Science Foundation
  • Office of Basic Energy Sciences
  • United States Department of Energy

Tags

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene