Gate Tuning of Electronic Phase Transitions in Two-DimensionalNbSe2

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 29, 2016
Source ID
10.1103/physrevlett.117.106801

Entities

People

  • Helmuth Berger
  • Jie Shan
  • Kin Fai Mak
  • László Forró
  • Xiaoxiang Xi

Organizations

  • Air Force Office of Scientific Research
  • National Science Foundation
  • Office of Basic Energy Sciences
  • Swiss National Science Foundation
  • United States Department of Energy

Tags

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene