Low-damage, in-situ chemical etching of GaN by tertiarybutyl-chloride (TBCl)

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 01, 2022
Source ID
10.1109/csw55288.2022.9930356

Entities

People

  • Bingjun Li
  • Guanjie Cheng
  • Jiaheng He
  • Jung Han
  • Rachel S. Goldman
  • Sam Frisone
  • Sizhen Wang
  • Zhirong Zhang

Organizations

  • Defense Advanced Research Projects Agency
  • United States Department of Energy
  • University of Michigan
  • Yale University