AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 26, 2022
Source ID
10.1109/drc55272.2022.9855809

Entities

People

  • Akito Kuramata
  • Alan G Jacobs
  • Andrew D. Koehler
  • Hannah N. Masten
  • James C. Gallagher
  • James Spencer Lundh
  • Joseph Spencer
  • Karl D. Hobart
  • Keita Konishi
  • Kohei Sasaki
  • Lei Chen
  • Marko J. Tadjer
  • Samuel Graham
  • Zhe Cheng

Organizations

  • National Academies of Sciences, Engineering, and Medicine
  • National Institute of Standards and Technology
  • Novel Crystal Technology, Inc.
  • Office of Naval Research
  • Office of Naval Research Global
  • United States Naval Research Laboratory
  • University of Illinois Urbana–Champaign
  • University of Maryland