GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 11, 2021
Source ID
10.1109/iedm19574.2021.9720496

Entities

People

  • A. Krishna
  • Aditya Raj
  • Brian Romanczyk
  • Christian Wurm
  • Matthew Guidry
  • N. Pakala
  • Nirupam Hatui
  • R. Hamwey
  • Sallie Ann Keller
  • Umesh K. Mishra

Organizations

  • Defense Advanced Research Projects Agency
  • Semiconductor Research Corporation
  • University of California, Santa Barbara