Standby Bias Improvement of Read After Write Delay in Ferroelectric Field Effect Transistors

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 11, 2021
Source ID
10.1109/iedm19574.2021.9720502

Entities

People

  • Asif Khan
  • Hang Chen
  • Jae Hur
  • Nujhat Tasneem
  • Shimeng Yu
  • Winston Chern
  • Zheng Wang

Organizations

  • Defense Advanced Research Projects Agency
  • Georgia Tech
  • University of Notre Dame