NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed

Document Details

Document Type
Pub Defense Publication
Publication Date
May 28, 2023
Source ID
10.1109/ispsd57135.2023.10147704

Entities

People

  • Boyan Wang
  • Han Wang
  • Joseph Spencer
  • Kohei Sasaki
  • Marko J. Tadjer
  • Ming Xiao
  • Qihao Song
  • Ruizhe Zhang
  • Yuan Qin
  • Yuhao Zhang
  • Zhonghao Du

Organizations

  • National Science Foundation
  • Novel Crystal Technology, Inc.
  • United States Naval Research Laboratory
  • University of Southern California
  • Virginia Tech