An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2015
Source ID
10.1109/jeds.2014.2363178

Entities

People

  • Amy W. K. Liu
  • Andrew Snyder
  • Brian J. Thibeault
  • Dmitri Loubychev
  • Han-wei Chiang
  • Joel M. Fastenau
  • Johann C. Rode
  • Mark J. W. Rodwell
  • Miguel Urteaga
  • Prateek Choudhary
  • Vibhor Jain
  • William J. Mitchell
  • Ying Wu

Organizations

  • National Science Foundation