Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 2017
- Source ID
- 10.1109/jeds.2017.2751554
Entities
People
- Hong Chen
- Houqiang Fu
- Xuanqi Huang
- Yuji Zhao
- Zhijian Lu
Organizations
- Arizona State University
- Defense Threat Reduction Agency