In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz fτ and 256 GHz f max

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2020
Source ID
10.1109/jeds.2020.3017141

Entities

People

  • Aranya Goswami
  • Brian Markman
  • Mark J. W. Rodwell
  • Matthew Guidry
  • Simone Tommaso Šuran Brunelli

Organizations

  • Defense Advanced Research Projects Agency
  • Semiconductor Research Corporation