A 28 nm Configurable Memory (TCAM/BCAM/SRAM) Using Push-Rule 6T Bit Cell Enabling Logic-in-Memory
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2016
- Source ID
- 10.1109/jssc.2016.2515510
Entities
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation