GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 01, 2014
- Source ID
- 10.1109/led.2014.2365413
Entities
People
- A. Arun Goud
- Ankit Sharma
- Kaushik Roy
Organizations
- Defense Advanced Research Projects Agency