Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2015
- Source ID
- 10.1109/led.2015.2416345
Entities
People
- Edwin Acuna
- Elaheh Ahmadi
- Geetak Gupta
- Karine Hestroffer
- Umesh Mishra
Organizations
- National Science Foundation
- Office of Naval Research