High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2016
- Source ID
- 10.1109/led.2016.2537198
Entities
People
- Heng Wu
- Hong Zhou
- Mengwei Si
- Nathan J. Conrad
- Peide Ye
- Roy G. Gordon
- Sami Alghamdi
- Shiping Guo
- Xiabing Lou
Organizations
- Air Force Office of Scientific Research
- National Renewable Energy Laboratory
- Office of Naval Research