High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2017
- Source ID
- 10.1109/led.2016.2635579
Entities
People
- Gang Qiu
- Hong Zhou
- Lingming Yang
- Mengwei Si
- Peide Ye
- Sami Alghamdi
Organizations
- Air Force Office of Scientific Research
- Defense Threat Reduction Agency