Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved ${g}_{{m}}$ and ${f}_{\textsf {T}}$ Linearity

Document Details

Document Type
Pub Defense Publication
Publication Date
May 01, 2017
Source ID
10.1109/led.2017.2689810

Entities

People

  • Geok Ing Ng
  • Haodong Qiu
  • Tomás Palacios
  • Weichuan Xing
  • Zhihong Liu

Organizations

  • National Research Foundation