InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2018
Source ID
10.1109/led.2017.2773054

Entities

People

  • Geok Ing Ng
  • Haodong Qiu
  • Kumud Ranjan
  • Tomás Palacios
  • Weichuan Xing
  • Yu Gao
  • Zhihong Liu

Organizations

  • National Research Foundation