High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 01, 2018
Source ID
10.1109/led.2017.2780221

Entities

People

  • Aaron R. Arehart
  • Andrew Allerman
  • Andrew Armstrong
  • Fatih Akyol
  • Sanyam Bajaj
  • Shahadat H. Sohel
  • Siddharth Rajan
  • Towhidur Razzak
  • Vishank Talesara
  • Wenyuan Sun
  • Wu Lu
  • Yuewei Zhang

Organizations

  • Air Force Office of Scientific Research
  • Ohio State University