GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2018
- Source ID
- 10.1109/led.2018.2797940
Entities
People
- Andrea Arias
- Andrew D. Carter
- Berinder Brar
- Casey King
- Eric J. Regan
- Joshua Bergman
- K. Shinohara
- Miguel Urteaga
Organizations
- Defense Advanced Research Projects Agency