Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 01, 2018
Source ID
10.1109/led.2018.2799160

Entities

People

  • Brian Romanczyk
  • Elaheh Ahmadi
  • Haoran Li
  • Karine Hestroffer
  • Matthew Guidry
  • S. Keller
  • Steven Wienecke
  • Umesh Mishra
  • Xun Zheng

Organizations

  • Defense Advanced Research Projects Agency
  • Office of Naval Research
  • University of California, Santa Barbara