Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2 Gate-Insulator and Zr-Based Ohmic Contacts

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 01, 2018
Source ID
10.1109/led.2018.2866027

Entities

People

  • Asif Khan
  • Fatima Asif
  • Grigory Simin
  • Kamal Hussain
  • Richard Floyd
  • Seongmo Hwang
  • Shahab Mollah
  • X. Hu

Organizations

  • Army Research Office
  • Defense Advanced Research Projects Agency

Tags

Technology Areas

  • Microelectronics