Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 01, 2018
Source ID
10.1109/led.2018.2874190

Entities

People

  • Austin Hickman
  • David A. Muller
  • Debdeep Jena
  • Han Wui Then
  • Huili Grace Xing
  • Kazuki Nomoto
  • Reet Chaudhuri
  • Samuel J Bader
  • Zhen Chen

Organizations

  • Air Force Office of Scientific Research
  • Division of Materials Research
  • Intel Corporation
  • National Science Foundation